Surreal digital illustration of diamond transistor with hexagonal boron nitride layer.

Diamond Transistors: The Future of High-Performance Electronics is Here

Q: How could diamond transistors impact industries such as electric vehicles, telecommunications, and consumer electronics?

Diamond transistors have the potential to revolutionize power conversion systems in electric vehicles, leading to significantly faster charging times and increased overall efficiency. Additionally, their robustness makes them ideal for high-frequency amplifiers in telecommunications, improving signal transmission and increasing bandwidth. They are also suited to high-power applications like industrial motor controls and power grids, where their ability to withstand extreme conditions is crucial. The use of diamond transistors can also translate into more efficient and cooler-running consumer electronics, extending battery life and enhancing overall device performance.

Q: What has been the primary limitation preventing diamond field-effect transistors (FETs) from achieving their full potential, and how does the use of monocrystalline hexagonal boron nitride (h-BN) address this?

The primary limitation has been the relatively low carrier mobility in traditional diamond field-effect transistors (FETs). This is due to imperfections and trapped charges in the gate dielectric, which is the insulating layer that controls the transistor's behavior. These imperfections hinder the movement of electrons through the material, preventing the transistors from reaching their theoretical performance capabilities. The use of monocrystalline hexagonal boron nitride (h-BN) addresses this limitation.

Q: Why is monocrystalline hexagonal boron nitride (h-BN) used as a gate dielectric in diamond field-effect transistors (FETs)?

Monocrystalline hexagonal boron nitride (h-BN) is used as a gate dielectric in diamond field-effect transistors (FETs) because it has a highly ordered structure with minimal charged impurities. This reduces the number of trapped charges at the interface between the dielectric and the diamond semiconductor, minimizing electron scattering and dramatically boosting carrier mobility. The (111)-oriented diamond surface, terminated with hydrogen, further reduces surface states and promotes efficient carrier transport.

Q: What specific performance metrics were achieved in the recent study using diamond FETs with h-BN gate dielectric, and why are these results considered groundbreaking?

The study achieved mobilities exceeding 300 cm² V⁻¹ s⁻¹ in their diamond FETs with h-BN gate dielectric, with moderately high carrier densities (>5 × 10¹² cm⁻²). The minimum sheet resistance achieved was also exceptionally low (<3 kΩ). These findings are a significant leap forward for diamond transistor technology, proving that a heterostructure of monocrystalline h-BN and diamond is an excellent platform for manufacturing high-performance electronic devices.

Q: What are the current research efforts and future goals for advancing diamond transistor technology and enabling its widespread adoption?

Current research efforts are focused on optimizing the h-BN/diamond interface, reducing defects, and exploring new device architectures. The ultimate goal is to develop scalable and cost-effective manufacturing processes to enable the widespread adoption of diamond electronics. Additional efforts include the alignment of h-BN longest edge to the [110] direction of diamond and electrical measurements to study mobility, carrier density and sheet conductance.

Nico Varela in Tech & Innovation September 2025 • 5 min read.

"Discover how cutting-edge research into diamond-based transistors could revolutionize industries from electric vehicles to telecommunications."

Imagine a world where your electric car charges in minutes, your smartphone never overheats, and your electronic devices operate with unparalleled efficiency. This future is closer than you think, thanks to the revolutionary potential of diamond transistors. For years, scientists have recognized diamond as a superior semiconductor material, capable of withstanding high temperatures and extreme electrical fields. These qualities make it ideal for high-power and high-frequency applications, far surpassing the capabilities of conventional silicon-based electronics.

The challenge, however, has been to harness diamond's potential effectively. Traditional diamond field-effect transistors (FETs) have been plagued by limitations in carrier mobility – the speed at which electrons can move through the material. This bottleneck has hindered their performance, preventing them from reaching their theoretical capabilities. The culprit? Imperfections and trapped charges in the gate dielectric, the insulating layer that controls the transistor's behavior.

But now, a breakthrough has emerged. Researchers have successfully created diamond FETs with a monocrystalline hexagonal boron nitride (h-BN) gate dielectric. This innovative approach has resulted in unprecedentedly high mobilities, paving the way for a new era of high-performance electronics. Let's delve into this exciting development and explore the potential it holds for various industries.

The Diamond Transistor Revolution: h-BN to the Rescue

Surreal digital illustration of diamond transistor with hexagonal boron nitride layer.

The key to this breakthrough lies in the unique properties of monocrystalline h-BN. Unlike conventional amorphous dielectrics, h-BN boasts a highly ordered structure with minimal charged impurities. This translates to a significantly reduced number of trapped charges at the interface between the dielectric and the diamond semiconductor, minimizing the scattering of electrons and dramatically boosting carrier mobility. Think of it like clearing obstacles from a racetrack, allowing the electrons to zoom along at incredible speeds.

In a recent study, researchers achieved mobilities exceeding 300 cm² V⁻¹ s⁻¹ in their diamond FETs with h-BN gate dielectric. To put that in perspective, this is a groundbreaking result considering moderately high carrier densities (>5 × 10¹² cm⁻²). The minimum sheet resistance achieved was also exceptionally low (<3 kΩ). These findings signify a major leap forward in diamond transistor technology, proving that a heterostructure of monocrystalline h-BN and diamond is an excellent platform for manufacturing high-performance electronic devices.

The implications of this research are far-reaching:

Electric Vehicles: Diamond transistors can revolutionize power conversion systems, enabling faster charging times and increased efficiency.
Telecommunications: High-frequency amplifiers based on diamond FETs can improve signal transmission and increase bandwidth.
High-Power Applications: Diamond transistors can withstand extreme conditions, making them ideal for industrial motor controls and power grids.
Consumer Electronics: More efficient and cooler running devices, extending battery life and enhancing performance.

The study's success hinges on several factors. The h-BN layer provides a clean, ordered interface with the diamond, minimizing electron scattering. Additionally, the (111)-oriented diamond surface, terminated with hydrogen, further reduces surface states and promotes efficient carrier transport. The researchers also employed meticulous fabrication techniques, including the Scotch tape exfoliation method, to ensure the pristine quality of the h-BN layer. The researchers aligned h-BN longest edge to the [110] direction of diamond. Electrical measurements were performed to study mobility, carrier density and sheet conductance.

The Road Ahead: Diamond Electronics for a Sustainable Future

While this breakthrough is significant, further research is needed to fully realize the potential of diamond transistors. Efforts are underway to optimize the h-BN/diamond interface, reduce defects, and explore new device architectures. The ultimate goal is to develop scalable and cost-effective manufacturing processes that will enable the widespread adoption of diamond electronics. As technology continues to advance, expect diamond transistor tech to bring a new era of sustainability and performance across countless industries. These devices not only promise superior performance but also align with the growing demand for energy-efficient and durable electronic solutions.

About this Article -

This article was crafted using a human-AI hybrid and collaborative approach. AI assisted our team with initial drafting, research insights, identifying key questions, and image generation. Our human editors guided topic selection, defined the angle, structured the content, ensured factual accuracy and relevance, refined the tone, and conducted thorough editing to deliver helpful, high-quality information.See our About page for more information.

This article is based on research published under:

DOI-LINK: 10.1063/1.5055812, Alternate LINK

Title: High-Mobility Diamond Field Effect Transistor With A Monocrystalline H-Bn Gate Dielectric

Subject: General Engineering

Journal: APL Materials

Publisher: AIP Publishing

Authors: Yosuke Sasama, Katsuyoshi Komatsu, Satoshi Moriyama, Masataka Imura, Tokuyuki Teraji, Kenji Watanabe, Takashi Taniguchi, Takashi Uchihashi, Yamaguchi Takahide

Published: 2018-11-01

Everything You Need To Know

How could diamond transistors impact industries such as electric vehicles, telecommunications, and consumer electronics?

Diamond transistors have the potential to revolutionize power conversion systems in electric vehicles, leading to significantly faster charging times and increased overall efficiency. Additionally, their robustness makes them ideal for high-frequency amplifiers in telecommunications, improving signal transmission and increasing bandwidth. They are also suited to high-power applications like industrial motor controls and power grids, where their ability to withstand extreme conditions is crucial. The use of diamond transistors can also translate into more efficient and cooler-running consumer electronics, extending battery life and enhancing overall device performance.

What has been the primary limitation preventing diamond field-effect transistors (FETs) from achieving their full potential, and how does the use of monocrystalline hexagonal boron nitride (h-BN) address this?

The primary limitation has been the relatively low carrier mobility in traditional diamond field-effect transistors (FETs). This is due to imperfections and trapped charges in the gate dielectric, which is the insulating layer that controls the transistor's behavior. These imperfections hinder the movement of electrons through the material, preventing the transistors from reaching their theoretical performance capabilities. The use of monocrystalline hexagonal boron nitride (h-BN) addresses this limitation.

Why is monocrystalline hexagonal boron nitride (h-BN) used as a gate dielectric in diamond field-effect transistors (FETs)?

Monocrystalline hexagonal boron nitride (h-BN) is used as a gate dielectric in diamond field-effect transistors (FETs) because it has a highly ordered structure with minimal charged impurities. This reduces the number of trapped charges at the interface between the dielectric and the diamond semiconductor, minimizing electron scattering and dramatically boosting carrier mobility. The (111)-oriented diamond surface, terminated with hydrogen, further reduces surface states and promotes efficient carrier transport.

What specific performance metrics were achieved in the recent study using diamond FETs with h-BN gate dielectric, and why are these results considered groundbreaking?