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Unlock 10x Memory: The Revolutionary Tech That Could Change Everything

Elliot Brynn in Tech & Innovation September 2025 • 4 min read.

"Scientists are engineering ferromagnetic materials to achieve ten nonvolatile memory states, paving the way for higher density and lower power consumption in future devices."

In our increasingly data-dependent world, the demand for high-density memory that consumes less power is ever-growing. The current binary system, while foundational, has limitations in meeting these demands. But what if we could move beyond the binary and embrace a decimal system in computers? It sounds like science fiction, but it's becoming more tangible thanks to innovative work in nonvolatile memory.

Recent research has focused on achieving multiple memory states within devices, paving the way for more efficient data storage. Now, a team of scientists is proposing a novel method to realize multiple reliable magnetic and resistance states, independent of specific materials or device structures. This approach, centered on engineering remanent magnetism, could revolutionize how we store and process information.

In a proof-of-concept demonstration, researchers have successfully created ten states of nonvolatile memory by manipulating ferromagnetic remanent magnetization in both Co/Pt magnetic multilayers and MgO-based magnetic tunneling junctions at room temperature. This breakthrough leverages the fundamental role of ferromagnets in information technology and opens up exciting possibilities for spintronics and beyond.

What is Remanent Magnetism Engineering and Why Does It Matter?

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Remanent magnetism engineering is a method that focuses on controlling the magnetic state that remains in a material after an external magnetic field is removed. By carefully manipulating this 'remanent' state, scientists can create multiple, distinct memory states within a single device. This is a departure from traditional binary systems, which rely on just two states (0 and 1).

The beauty of this approach lies in its potential for broader application. Unlike methods that depend on specific materials or device structures, remanent magnetism engineering can be adapted and applied to various systems. This versatility is particularly important as we strive to develop more advanced and efficient memory technologies.

Here's why achieving multiple nonvolatile states is a game-changer:

Increased Memory Density: Storing more information in the same physical space.
Lower Power Consumption: Reducing energy usage, crucial for mobile devices and sustainable computing.
Decimal Computing: Enabling the development of computers that operate on a decimal system, potentially leading to greater efficiency.
Advancements in AI: Supporting neural networks, artificial intelligence, and brain-like computing.

The researchers demonstrated the feasibility of this method using cobalt/platinum (Co/Pt) multilayers and magnetic tunneling junctions (MTJs). In the Co/Pt multilayers, they achieved ten distinct nonvolatile memory states, verified through remanent magnetization, magneto-optical, and anomalous Hall effect measurements. Moreover, when incorporating ferromagnets into MTJs, these ten states could be read out by measuring tunneling magnetoresistance (TMR).

The Future of Memory is Here

The successful demonstration of ten nonvolatile memory states through remanent magnetism engineering marks a significant step forward in memory technology. This approach, with its potential for high-density, low-power consumption, and adaptability, could pave the way for a new generation of memory devices and revolutionize various fields, from consumer electronics to artificial intelligence. As research and development in this area continue, we can anticipate exciting advancements that will shape the future of how we store and process information.

About this Article -

This article was crafted using a human-AI hybrid and collaborative approach. AI assisted our team with initial drafting, research insights, identifying key questions, and image generation. Our human editors guided topic selection, defined the angle, structured the content, ensured factual accuracy and relevance, refined the tone, and conducted thorough editing to deliver helpful, high-quality information.See our About page for more information.

This article is based on research published under:

DOI-LINK: 10.1002/adfm.201806460, Alternate LINK

Title: Ten States Of Nonvolatile Memory Through Engineering Ferromagnetic Remanent Magnetization

Subject: Electrochemistry

Journal: Advanced Functional Materials

Publisher: Wiley

Authors: Hai Zhong, Yan Wen, Yuelei Zhao, Qiang Zhang, Qikun Huang, Yanxue Chen, Jianwang Cai, Xixiang Zhang, Run-Wei Li, Lihui Bai, Shishou Kang, Shishen Yan, Yufeng Tian

Published: 2018-11-14

Everything You Need To Know

What is remanent magnetism engineering and why is controlling the 'remanent' state so important for memory technology?

Remanent magnetism engineering is a technique that focuses on controlling the magnetic state remaining in a material after an external magnetic field is removed. This allows scientists to create multiple distinct memory states within a single device, moving beyond the traditional binary system. It matters because it offers potential for broader application across various systems, leading to more advanced and efficient memory technologies. Unlike methods dependent on specific materials, this can be widely adapted.

How did scientists successfully demonstrate ten states of nonvolatile memory, and what specific materials and methods were used?

The scientists successfully created ten states of nonvolatile memory by manipulating ferromagnetic remanent magnetization in both Co/Pt magnetic multilayers and MgO-based magnetic tunneling junctions at room temperature. In the Co/Pt multilayers, ten distinct nonvolatile memory states were achieved and verified through remanent magnetization, magneto-optical, and anomalous Hall effect measurements. These states can be read out by measuring tunneling magnetoresistance (TMR) when incorporating ferromagnets into MTJs.

What are the key implications of achieving multiple nonvolatile states through remanent magnetism engineering, particularly in terms of memory density, power consumption, and computing paradigms?

Achieving multiple nonvolatile states through remanent magnetism engineering has several profound implications. First, it drastically increases memory density, allowing more information to be stored in the same physical space. Second, it significantly reduces power consumption, which is crucial for mobile devices and sustainable computing. Moreover, it enables the development of computers that operate on a decimal system, potentially leading to greater efficiency and supporting advancements in AI, neural networks, and brain-like computing.

Why is the use of ferromagnetic materials fundamental to achieving multiple memory states, and how does their integration into magnetic tunneling junctions (MTJs) contribute to this?

The use of ferromagnetic materials is fundamental because of their ability to maintain a magnetic state even without an external field. By engineering the remanent magnetism of materials like Co/Pt and incorporating them into structures like magnetic tunneling junctions (MTJs), researchers can create multiple stable and distinguishable memory states. These states can then be used to store and process data, enabling higher density and lower power consumption in memory devices. The versatility of ferromagnetic materials makes this method adaptable to various systems.

What are the next steps in developing this technology, and what areas need further research to optimize the reliability and scalability of devices using remanent magnetism engineering?

While the demonstration achieved ten nonvolatile memory states, further research is needed to optimize the reliability, speed, and scalability of these devices for practical applications. Areas needing more exploration include long-term data retention, endurance under repeated read/write cycles, and the integration of this technology into existing computing architectures. Additionally, exploring other ferromagnetic materials and device structures could further enhance the performance and efficiency of remanent magnetism engineering.