Doublet Power: New Light-Emitting Diodes Shatter Efficiency Records
"Radical-based OLEDs unlock unprecedented performance in deep-red and infrared LEDs, paving the way for brighter displays and advanced lighting solutions."
Organic light-emitting diodes (OLEDs) are gaining traction as a key technology for displays and active lighting, offering lightweight and flexible solutions. While OLEDs are already used in some high-end products, reducing manufacturing costs while maintaining high performance is crucial for wider adoption.
A significant breakthrough has been achieved with the development of radical-based OLEDs, which utilize a spin doublet emission process. Unlike traditional OLEDs that rely on singlet or triplet excitons, these new devices circumvent efficiency limitations, leading to unprecedented performance.
By employing a luminescent radical emitter, researchers have created an OLED with a maximum external quantum efficiency of 27% at 710 nanometers. This represents the highest reported value for deep-red and infrared LEDs, opening up new possibilities for these technologies.
Doublet Emission: Bypassing Triplet Bottlenecks

Conventional organic semiconductors rely on the recombination of electrons and holes occupying the highest occupied and lowest unoccupied molecular orbitals (HOMOs and LUMOs), resulting in the formation of singlet or triplet excitons. However, radical emitters possess a singly occupied molecular orbital (SOMO) in their ground state, giving them a spin-1/2 doublet. Under energetic grounds, both electron and holes occupy this SOMO level, light emission is not expected.
- TTM-3NCz and TTM-3PCz: New luminescent radicals with 3-substituted-9-(naphthalen-2-yl)-9H-carbazole (3NCz) and 3-substituted-9-phenyl-9H-carbazole (3PCz) to the core tris(2,4,6-trichlorophenyl)methyl (TTM) radical incorporated.
- High PLQE Values: The photoluminescence quantum efficiency (PLQE) in solid 4,4-bis(carbazol-9-yl)biphenyl (CBP) matrix film (3.0 wt%) is (85.6±5.4)% and (60.4±0.9)% for deep-red emission in TTM-3NCz (707 nm) and TTM-3PCz (695 nm), respectively.
- Vacuum Deposition: OLEDs using TTM-3NCz and TTM-3PCz as emitters were fabricated by vacuum deposition processing (pressure <6 × 10-7 torr). The evaporation temperatures of TTM-3NCz and TTM-3PCz under vacuum are below 473 K.
Future Implications and Applications
This breakthrough in radical-based OLED technology holds significant promise for the future of displays and lighting. The high efficiency achieved through doublet emission opens doors for brighter, more energy-efficient deep-red and infrared LEDs.
Potential applications include advanced display technologies, improved infrared sensors, and innovative lighting solutions. Further research and development in this area could lead to widespread adoption of radical-based OLEDs in various industries.
While challenges remain in terms of manufacturing scalability and long-term stability, the remarkable performance of these novel OLEDs marks a major step forward in organic electronics.