Flexible, translucent device bending, displaying soft internal light with abstract circuit background, symbolizes the power of piezopotential.

Bend It, Charge It: How Flexible Tech Could Power the Future

Avery Sinclair in Tech & Innovation June 2025 • 3 min read.

"New research unveils a breakthrough in flexible electronics, paving the way for wearable sensors and bendable displays with enhanced performance."

Imagine a world where your clothes monitor your health, your phone bends without breaking, and every surface can display information. This isn't science fiction; it's the promise of flexible electronics, and researchers are making rapid strides toward this reality.

A key component in this technological revolution is the development of materials that can bend, stretch, and conform to different shapes without losing their functionality. Two-dimensional (2D) materials, with their exceptional mechanical strength and unique electronic properties, are at the forefront of this innovation.

Now, a team of scientists has achieved a significant breakthrough by creating a high-performance flexible phototransistor using a novel material: tin-doped indium selenide (In1-xSnxSe). This research opens up exciting possibilities for advanced wearable sensors, flexible displays, and other cutting-edge applications.

The Power of Piezopotential: Bending Light and Electricity

Flexible, translucent device bending, displaying soft internal light with abstract circuit background, symbolizes the power of piezopotential.

The heart of this innovation lies in a phenomenon called the piezopotential effect. Certain materials, when subjected to mechanical stress (like bending), generate an electrical potential. In this study, researchers harnessed this effect in their In1-xSnxSe phototransistor to dramatically enhance its performance.

By applying a bending strain of just 2.7%, the scientists were able to increase both the dark current and photocurrent of the device by fivefold. This improvement translates to a maximum photoresponsivity of 1037 A/W, a significant leap compared to existing flexible photodetectors. The device also demonstrates impressive strain sensitivity, making it suitable for use as a highly sensitive strain sensor.

Key highlights of the research:

Five-fold increase in dark and photocurrent under bending strain.
Maximum photoresponsivity of 1037 A/W.
High strain sensitivity for use as a strain sensor.
Potential for use in advanced wearable sensors and flexible displays.

The researchers attribute this enhanced performance to the strain-induced gate voltage, which facilitates the efficient separation of photogenerated charge carriers and boosts their mobility within the material. This innovative approach essentially turns the flexible device into a high-performance phototransistor capable of functioning on any freeform surface.

The Future is Flexible

This research represents a significant step forward in the development of flexible electronics. By harnessing the power of the piezopotential effect and utilizing innovative materials like tin-doped indium selenide, scientists are paving the way for a future where technology seamlessly integrates into our lives, bending and flexing to meet our needs.

About this Article -

This article was crafted using a human-AI hybrid and collaborative approach. AI assisted our team with initial drafting, research insights, identifying key questions, and image generation. Our human editors guided topic selection, defined the angle, structured the content, ensured factual accuracy and relevance, refined the tone, and conducted thorough editing to deliver helpful, high-quality information.See our About page for more information.

This article is based on research published under:

DOI-LINK: 10.1039/c8nr05234d, Alternate LINK

Title: Ultra-High Performance Flexible Piezopotential Gated In_1−XSn_XSe Phototransistor

Subject: General Materials Science

Journal: Nanoscale

Publisher: Royal Society of Chemistry (RSC)

Authors: Christy Roshini Paul Inbaraj, Roshan Jesus Mathew, Golam Haider, Tzu-Pei Chen, Rajesh Kumar Ulaganathan, Raman Sankar, Krishna Prasad Bera, Yu-Ming Liao, Monika Kataria, Hung-I Lin, Fang Cheng Chou, Yit-Tsong Chen, Chih-Hao Lee, Yang-Fang Chen

Published: 2018-01-01

Everything You Need To Know

What exactly are flexible electronics, and what types of applications do they enable?

Flexible electronics refers to electronic circuits and devices that can be bent, stretched, or conformed to various shapes without losing their functionality. This technology utilizes materials like two-dimensional (2D) materials to create wearable sensors, bendable displays, and other applications where flexibility is essential.

What is the 'piezopotential effect,' and how is it used to enhance flexible electronics?

The piezopotential effect is a phenomenon where certain materials generate an electrical potential when subjected to mechanical stress, such as bending. In the context of flexible electronics, researchers can harness the piezopotential effect to enhance the performance of devices like the tin-doped indium selenide phototransistor by using strain to improve charge carrier separation and mobility.

What is tin-doped indium selenide (In1-xSnxSe), and why is it important for flexible electronics?

Tin-doped indium selenide (In1-xSnxSe) is a novel material used to create a high-performance flexible phototransistor. When this material is bent, the piezopotential effect increases both the dark current and photocurrent, leading to enhanced photoresponsivity and strain sensitivity. This makes it suitable for advanced wearable sensors and flexible displays.

How does the new flexible phototransistor improve upon existing flexible photodetector technologies?

The new flexible phototransistor, made from tin-doped indium selenide, significantly improves upon existing technologies with its five-fold increase in dark and photocurrent under bending strain and a maximum photoresponsivity of 1037 A/W. Its high strain sensitivity also makes it ideal for use as a highly sensitive strain sensor, opening up possibilities for more advanced and responsive wearable technology.

What are the broader implications of successfully utilizing the piezopotential effect in flexible electronics, and what kind of future does it suggest?

The successful application of the piezopotential effect in tin-doped indium selenide phototransistors suggests a future where electronic devices are seamlessly integrated into everyday objects. Imagine clothing that monitors health, displays integrated into any surface, and bendable phones. This innovation promises more adaptable and user-friendly technology that can conform to various needs and environments, and it highlights the importance of exploring novel materials to make it happen.